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MITSUBISHI ICs for Optical Communication
Notice: This is not a final specification. Some parametric limits are subject to change.
ML0XX18
10Gb/s EA Modulator Driver IC
GENERAL DESCRIPTION
The ML0XX18 is an external modulator driver for 10Gb/s optical communication systems. Output voltage swing, output voltage offset, and output voltage cross-point are adjustable by controls of current inputs. A D-FF and a selector are integrated on the chip to implement selectable re-timing/bypass function. Data and clock inputs have high sensitivity of 200mV differential amplitude. Both DC/AC-coupled connections are allowed for the data inputs. Clock input supports AC-coupled connection. The ML0XX18 is available in a 32-pin Small Lead-frame Package (SLP-type) or in a die form.
FEATURES
*Operation for 10Gbps Optical Communication *On-chip Input / Output 50 Termination *Built-in D-FF (Retiming and Non-retiming Mode Selectable) *Output Voltage Swing: Vo-pp(Max.)=3 Vp-p min. @RL=50 *The -5.2V Single Power Supply *DC or AC Coupled Data Input with High Sensitivity of 200mV Differential (100mV per side).
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as ()placement of Substitutive, auxiliary circuits, ()use of non-flammable material or ()prevention against any malfunction or mishap.
*Adjustable Output Modulation Voltage: Vo-pp= 1 - 3Vpp *Adjustable Output Voltage Offset: Voh= -1.0 - 0V *Adjustable Output Voltage Cross-Point: CP= 30 - 75%
APPLICATION *SONET OC-192 and SDH STM-64 Transmission systems *10Gb/s Ethernet Modules *10Gb/s Fibre Channel Modules
RECOMMENDED OPERATING CONDITIONS
Symbol VEE VGNDO VGNDON VDATA VDATA(High) VDATA(Low) VCLK IM IOFS ICRSADJ TC Parameter Supply Voltage Driver Output Termination Voltage (GNDO/GNDON) DATA Input Voltage Amplitude DATA Input Level High DATA Input Level Low CLK Input Voltage Amplitude Output Voltage Modulation Control Current Output Voltage offset Control Current Cross-Point Control Current Operating Case Temperature Test Conditions -- RL=50 AC-coupled/side DC-coupled DC-coupled AC-coupled/side -- Bias Non-Bias -- -- Min. -5.46 -- 0.1 -0.45 -1.0 0.1 0 0 -- 0.25 0 Ratings Typ. -5.2 0 0.25 -0.375 -0.625 0.25 -- -- Floating 0.35 -- Max. -4.94 -- 1 -0.0 -0.55 1 6.0 6.0 -- 0.5 85 Unit V V V V V V mA mA mA mA C
MITSUBISHI ELECTRIC -1-
`04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
Notice: This is not a final specification. Some parametric limits are subject to change.
ML0XX18
10Gb/s EA Modulator Driver IC
ABSOLUTE MAXIMUM RATINGS
Symbol VEE VDATA, VCLK VOUT IOUT IM IOFS ICRSADJ TJ TSTG Parameter Supply Voltage All Pins Input Voltage Output Voltage Output Current Output Voltage Modulation Control Current Output Voltage offset Control Current Cross-Point Control Current Junction Temperature Storage Temperature Ratings Min. -7.0 VEE -6 -4 -- -- -- -- -40 -40 Max. 0.5 0.5 0.5 2.5 100 10 10 3 150 150 Unit V V V V mA mA mA mA C C
ELECTRICAL CHARACTERISTICS ( Ta = 253C, VEE =-5.2V, fDATA =10.3Gb/s, PRBS 231-1, RL=50)
Symbol fDATA fCLK IEE VO-PP (Max.) VO-PP (Min.) VOH VOL VOFS CP tR tF JITPP PM S11 (Data) S11 (CLK) S22 Parameter Maximum Data Rate Clock Rate Power Supply Current Output Voltage Swing(Max.) Output Voltage Swing(Min.) Output High Voltage Output Low Voltage Output Offset Voltage Cross-point Control Range Rise Time Fall Time Jitter P-P Phase Margin Data Input Reflection Coefficient Clock Input Reflection Coefficient Output Reflection Coefficient
NRZ IOFS=floating, IM=6mA, CP=50%, AC-coupled inputs IOFS=floating, IM=6mA, CP=50% IOFS=floating, IM=2mA, CP=50% IOFS=floating, IM=6mA, CP=50% IOFS=floating, VOFS=0V Retiming mode Non retiming mode
Test Conditions
Min. -- 1.0 -- -- -- -- -- -- -1.0 TBD -- -- -- -- 270
Ratings Typ. 10.3 10.3 310 270 3.0 1.0 0 -3.2 -- -- 30 30 12 12 -- -10 -10 -10
Max. -- -- TBD TBD -- -- -- -- 0 75 -- -- -- -- --
Unit Gb/s GHz mA Vp-p Vp-p V V V % ps ps ps ps degrees dB dB dB
IOFS=floating, IM=6mA, CP=50%, 20-80% IOFS=floating, IM=6mA, CP=50%, 20-80% IOFS=floating, IM=6mA, CP=50%, Retiming mode Non retiming mode
50MHz to 10GHz 1GHz to 10GHz 50MHz to 10GHz, DOUT =ON
ORDERING INFORMATION
Part Number ML0CP18 ML01618
Description Bare Die 32-pin SLP, 5mm x 5mm
MITSUBISHI ELECTRIC -2-
`04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
Notice: This is not a final specification. Some parametric limits are subject to change.
ML0XX18
10Gb/s EA Modulator Driver IC
FUNCTIONAL DESCRIPTION
The ML0XX18 is an external modulator driver integrating a D-FF and output waveform adjustment controls, such as output swing, offset voltage, and cross point. These functions of the ML0XX18 help customers to realize an excellent optical waveform on their system. Figure 1 shows the block diagram of the ML0XX18.
IINBIAS
GND
VEE
ICRSADJ
IOFS
50
50
Offset Voltage Control
GNDO GNDON
DATA DATAN D-FF CLK CLKN
50 50
SEL
Cross -Point Control
Modulation
Modulation Current Control
OUT OUTN
CSEL
IM
Figure 1. ML0XX18 Block Diagram
DATA/CLOCK INPUT Both the data and clock inputs have on-chip 50 terminations. Thanks to the high gain input buffers, the sensitivities of data and clock inputs are as high as 200mV differential. For the data input interface, both DC/AC-coupled connections are allowed. In the case of DC couple, keep IINBIAS floating or connect to VEE in order to disable the internal biasing generator. If interfacing by AC couple, connect IINBIAS to GND, and external DC blocking capacitors are required for AC couple. The clock input supports only AC-coupled configuration. External DC blocking capacitors are needed as well.
MITSUBISHI ELECTRIC -3-
`04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
Notice: This is not a final specification. Some parametric limits are subject to change.
ML0XX18
10Gb/s EA Modulator Driver IC
DATA OUTPUT The data output of ML0XX18 has integrated terminations on chip. The positive output OUT and the negative output OUTN have associated GND PAD named GNDO and GNDON, respectively. GNDO and GNDON are disconnected from other GND line on chip, and needed to be connected to GND externally. Give a special attention to impedance design for OUT and OUTN. The impedances of both output terminals need to be the same regardless of the output to drive an EAM/LD or not. For ML0CP18, design same output bond-wire lengths. This notification is of importance for proper operation of driver IC. The output waveforms of ML01618 (SLP) are shown in Figure 2, and those of ML0CP18 (Bare Die) are shown in Figure 3.
Retimed by D-FF Vout= 3.047Vpp (High=-23.0mV Low= -3.070V) Tr/Tf=28.9/25.8ps Jitter PP=10.2ps ICRSADJ=0.368mA
Non-retiming Vout= 3.107Vpp (High=-35.0mV Low= -3.142V) Tr/Tf=29.3/26.2ps Jitter PP=13.3ps ICRSADJ=0.356mA
Vss=-5.2V, Ta=RT, fDATA=10Gb/s, Data/Clk=0.25Vpp(AC), Im=6.0mA, IOFS=0mA
Figure 2.
ML01618(SLP) Output Waveforms
Im=6.0mA Vout= 3.009Vpp (High=-58.5mV Low= -3.067V) Tr/Tf=29.8/29.3ps Jitter PP=12.4ps
Im=2.0mA Vout= 1.025Vpp (High=-47.0mV Low= -1.072V) Tr/Tf=27.1/31.6ps Jitter PP=10.2ps
Vss=-5.2V, Ta=RT, fDATA=10Gb/s, Data/Clk=0.25Vpp(AC), IOFS=0mA, ICRSADJ=0.38mA, Retimed by D-FF
Figure 3.
ML0CP18 (Bare die) Output Waveform
MITSUBISHI ELECTRIC -4-
`04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
Notice: This is not a final specification. Some parametric limits are subject to change.
ML0XX18
10Gb/s EA Modulator Driver IC
BUILT-IN D-FF The ML0XX18 has an internal D-FF to retime the data by the clock supplied from an external source. To use the D-FF retiming operation, connect CSEL to GND. On the other hand, by connecting CSEL to VEE, an integrated selector SEL will bypass the D-FF, and shut down the power supply of the D-FF and the clock input buffer. The power down feature at the non-retiming operation reduces the power dissipation of the ML0XX18.
OUTPUT WAVEFORM ADJUSTMENT The ML0XX18 has output waveform adjustment capabilities of output swing, offset level, and output cross-point. The output voltage swing can be controlled by IM of Modulation Current Control block. Figure 4(a) shows the characteristics of output swing control. The output offset level can be adjusted by IOFS. The output offset level is defined as the high level of output waveform to GND. Figure 4(b) shows an offset control example. ICRSADJ is the current control input of cross point adjustment as shown in Figure 4(c).
0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0.0 2.0 4.0 Im[mA] 6.0 8.0 Vhigh Vlow
0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0.0 2.0
Vhigh
Vlow
100.0 90.0 80.0 CrossPoint[%] 70.0 60.0 50.0 40.0 30.0 20.0 10.0 00.0
High/Low[V]
High/Low[V]
4.0 Ioff[mA]
6.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
ICRSADJ[mA]
(a) Output Swing Control IOFS=0mA, ICRSADJ=0.4mA
(b) Output Offset Control IM=4mA, ICRSADJ=0.4mA
(c) Output Cross-point Control IM=6mA, IOFS=0mA
Vss=-5.2V, Ta=RT, fDATA=10Gb/s, Data/Clk=0.25Vpp(AC)
Figure 4. ML0XX18 Control Characteristics
MITSUBISHI ELECTRIC -5-
`04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
Notice: This is not a final specification. Some parametric limits are subject to change.
ML0XX18
10Gb/s EA Modulator Driver IC
PACKAGE DESCRIPTION (ML01618)
Figure 5. Package Drawing of 32-pin Small Lead-frame Package (SLP)
CRSADJ
IO F S
GND
GND
GND
VEE
VEE
32
IIN B IA S GND DATA GND GND DATAN GND NC
31
30
29
28
27
26
25 24 23 22 21 20 19 18 17
CSEL GND OUT GNDO GNDON OUTN GND NC
1 2 3 4 5 6 7 8 9
NC
* Exposed die pad portion on the back side of SLP needs to be connected to GND. In other words, when VEE is supplied by -5.2V, supply 0V to the die pad. In the case of positive power supply (+5.2V to GND terminals and 0V to VEE), supply +5.2V to the die pad. For the detailed information for the positive power supply usage, please contact to your local rep. * The pins specified as NC need to be left "OPEN". * Pin 21"GNDO", pin 20"GNDON" and pin 32"GND" are not connected to "GND" line inside chip. Connect these pins to GND externally.
10
GND
11
C LK
12
GND
13
GND
14
C LK N
IM
15
GND
16
NC
Figure 6.
Pin assignment of ML01618 (SLP)
MITSUBISHI ELECTRIC -6-
`04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
Notice: This is not a final specification. Some parametric limits are subject to change.
ML0XX18
10Gb/s EA Modulator Driver IC
PAD ASSIGNMENT (ML0CP18)
38 37 36 35 34 33 32 1 2
31
30
29 28 27 26 25 24 23 22 21 20 19 18 17
1,600um
3 4 5 6 7 8 9 10 11 12
13 14 15 16
t=75um
2,300um
* The back side of die needs to be connected to GND. In other words, when VEE is supplied with
-5.2V, supply 0V to the backside. In the case of positive power supply (+5.2V to GND terminals and 0V to VEE), supply +5.2V to the backside. For the detailed information for the positive power supply usage, please contact to your local rep.
* The pads specified as NC need to be left "OPEN".
* Pad 19"GNDON", pad 20"GNDO" and pad 36"GND" are not connected to "GND" line inside chip. Connect these pads to GND externally.
Figure 7.
Pad assignment of ML0CP18 (Bare Die)
MITSUBISHI ELECTRIC -7-
`04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
Notice: This is not a final specification. Some parametric limits are subject to change.
ML0XX18
10Gb/s EA Modulator Driver IC
PAD DESCRIPTION (ML0CP18)
PAD No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
Symbol GND DATA GND GND DATAN GND GND CLK GND GND CLKN GND NC NC NC NC GND OUTN GNDON
Description Ground Data Input Positive Ground Ground Data Input Negative Ground Ground Clock Input Positive Ground Ground Clock Input Negative Ground No Connection No Connection No Connection No Connection Ground Data output Negative Ground for OUTN
Center Coordinates ( 105, 1250) ( 105, 1100) ( 105, 950) ( 105, 650) ( 105, 500) ( 105, 350) (700, 105) (850, 105) (1000, 105) (1300, 105) (1450, 105) (1600, 105) (1835, 105) (1955, 105) (2075, 105) (2195, 105) (2195, 350) (2195, 500) (2195, 650)
Sizes 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90
PAD No. 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
Symbol GNDO OUT GND CSEL NC IOFS NC IM NC VEE VEE VEE VEE NC ICRSADJ NC GND NC IINBIAS
Description Ground for OUT Data Output Positive Ground Re-timing/Non Re-timing Select Input No Connection Positive Output Offset Voltage Control Current No Connection Output Swing Control Current No Connection Supply Voltage Supply Voltage Supply Voltage Supply Voltage No Connection Cross Point Adjust Control Current No Connection Ground No Connection Input Bias Level Control Current
Center Coordinates (2195, 950) (2195, 1100) (2195, 1250) (2195,1495) (2075,1495) (1955,1495) (1835,1495) (1715,1495) (1595,1495) (1465,1495) (1255,1495) (1045,1495) (835,1495) (705,1495) (585,1495) (465,1495) (345,1495) (225,1495) (105,1495)
Sizes 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90 90x90
MITSUBISHI ELECTRIC -8-
`04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
Notice: This is not a final specification. Some parametric limits are subject to change.
ML0XX18
10Gb/s EA Modulator Driver IC
NOTIFICATION FOR BARE DIE SUPPLY (ML0CP18)
1. Quality After the reception of bare die by the customer, performance, yield and reliability of the application of the bare die will not be guaranteed. The supplier does not have the responsibility for field failures in the applied product. 2. Storage a) Store in dry nitrogen. < Before opening shipped conductive film bag (dry N2 sealed) > Temperature : 15 to 35 deg. C Humidity : 45% - 75% RH Term : 3 months < After opening > Temperature : 15 to 35 deg. C Atmosphere : Dry N2 gas (The dew point should be less than -30 deg. C) (No contact with gas including ammonia and sulfur) Term : The appearance of the bare die is not guaranteed after its opening. b) Don't apply excess vibration or shock. 3. Opening a package a) Handle devices in clean room or on clean bench. b) Take measures to avoid electro-static damage. c) To open a film bag, please use scissors or a knife. d) When taking out the devices, never touch devices barehanded. Please use clean tweezers or similar. When use tweezers, please catch a device by side to avoid cracking or damaging the device. Since gallium arsenide is more brittle material than silicon, special care must be taken. 4. Die bonding The following methods are recommended for die bonding. a) Die should be bonded lower than 300 deg. C. b) The time duration of die bonding at maximum temperature is recommended to be shorter than 15 sec. c) Cool down gradually, to avoid chip crack. d) All die bonding equipment and workers should be grounded. 5. Wire bonding The following methods are recommended for wire bonding. a) Bonding force of wire bonding is recommended to be less than 55 grams with ultrasonic. b) Check ultrasonic power not to damage on die and die pads. c) Cool down gradually. d) All wire bonding equipment and workers should be grounded. 6. Design a) It is recommended to use this product in a hermetic sealed condition (N2 sealed). b) It is recommended for customer to verify the performance and the qualification by customer's final product. Especially, oscillation and noise generation might happen.
MITSUBISHI ELECTRIC -9-
`04/1/14 rev.2.1

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